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| T-1 3/4 PACKAGE PIN PHOTODIODE Description The MID-56A19 is a photodiode mounted in special dark end look plastic package and suitable for the IRED 940nm type. 7.62 (.300) 5.90 (.230) 1.00 (.040) MID-56A19 Package Dimensions r 5.05 (.200) Unit: mm ( inches ) 5.47 (.215) FLAT DENOTES CATHOD 23.40 MIN. (.920) Features l l l l l .50 TYP. (.020) High photo sensitivity Low junction capacitance High cut-off frequency Fast switching time Acceptance viwe angle : 60 A C 2.54 (.100) 1.00MIN. (.040) Notes : 1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.0 mm (.040") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 150 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds o o o o o Unit mW Unity Opto Technology Co., Ltd. 02/04/2002 MID-56A19 Optical-Electrical Characteristics Parameter Reverse Break Down Voltage Reverse Dark Current Open Circuit Voltage Rise Time Fall Time Light Current Total Capacitance Test Conditions IR=100A Ee=0 VR=10V Ee=0 =940nm Ee=0.1mW/cm VR =10V,=940nm RL=50 VR =5V , =940nm Ee=0.1mW/cm VR =3V , f=1MHZ Ee=0 2 2 Symbol V(BR)R ID VOC Tr Tf IL CT Min. 30 Type . Max. @ TA=25oC Unit V nA mV 30 350 30 30 12 25 nsec A pF Typical Optical-Electrical Characteristic Curves 4000 100 80 60 40 20 0 0 5 10 15 20 0.01 0.1 1 10 100 Dark Current - pA 3000 2000 1000 0 Reverse Volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TA=25oC, Ee=0 mW/cm2 Total Power Dissipation mW 200 Capacitance C - pF Dark Current IR - nA 0 20 40 60 80 100 Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE F=1MHZ, Ee=0mW/cm2 1000.0 150 100.0 100 10.0 50 1.0 0 0.1 0 20 40 60 80 100 Ambient Temperature -oC FIG.3 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE Ambient Temperature-oC FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE 2 VR=10, Ee=0 mw/cm Unity Opto Technology Co., Ltd. 02/04/2002 MID-56A19 Typical Optical-Electrical Characteristic Curves 100 1000 Relative Spectral Sensitivity 80 60 40 20 0 700 850 1000 1150 1300 Ip - A Photocurrnet @ 100 10 1 0.1 0.01 0.1 1 2 10 Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH 0 10 20 30 40 1.0 0.9 0.8 50 60 70 80 90 0.5 0.3 0.1 0.2 0.4 0.6 Irradiance Ee (mW/cm ) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 940 nm Relative Sensitivity FIG .7 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002 |
Price & Availability of MID-56A19
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